The continual scaling of VLSI devices to smaller dimensions, higher performance, and higher integration levels over the last thirty years has directly enabled the "information society." Scaling has reduced the cost of intelligence (that is, electronic circuits) by some six orders of magnitude, while performance has continuously increased. Continued growth of the information economy depends on the further scaling of silicon-based electronic devices to the 0.1 micron (nanoscale) level and beyond. Our group works to achieve this goal through the science and technology of silicon-based heterojunctions and three-dimensional integration for VLSI. The work involves the growth of novel materials on a near-atomic scale, materials processing, and finally their application into electronic devices such as heterojunction transistors, FET's, quantum devices, and also optoelectronic devices such as infrared detectors and emitters. Specific focuses in our lab include rapid thermal chemical vapor deposition, silicon-germanium and silicon-germanium-carbon alloys, silicon-on-insulator, and heterojunction devices.